详细描述
The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band, and general purpose radio applications in standard sub-bands from 150MHz to 960MHz. On-board power control provides over 70dB of control range with an analog voltage input, and allows for power down with a logic "low" in standby operation. The device is self-contained with 50? input and the output can be easily matched to obtain optimum power and efficiency characteristics.
特点
Single 2.8V to 3.6V Supply
32dBm Output Power
52% Efficiency
150MHz to 960MHz Operation