详细描述
RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39 dBm, and P1dB = 25.5dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA9189Z is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
特点
500MHz to 3000MHz Operation
39dBm Output IP3 typical at 1.96GHz
12.2dB Gain typical at 1.96GHz
25.5dBm P1dB typical at 1.96GHz
2.1dB NF typical at 0.9GHz
Cost Effective
3V to 5V Operation