详细描述
RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package.
特点
P1dB = 29.5dBm at 2140MHz
ACP = -65dBc with 17dBm Channel Power at 2140MHz
Low Thermal Resistance Package
Power Up/Down Control <1μs
Robust Class 1C ESD