详细描述
The RFG1M20180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, and is ideal for constant envelope, pulsed, WCDMA, and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20180 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.
特点
Advance GaN HEMT technology
Typical peak modulated power >180W
Advanced heat-sink technology
Single circuit for 1.8GHz to 2.2GHz
48V operation typical performance: POUT = 46.5dBm Gain = 14.6dB Drain Efficiency = 33% ACP = -36dBc Linearizable to -55dBc with DPD
POUT = 46.5dBm
Gain = 14.6dB
Drain Efficiency = 33%
ACP = -36dBc
Linearizable to -55dBc with DPD
-25°C to 85°C operating temperature
Optimized for video bandwidth and minimized memory effects
RF tested for 3GPP performance
RF tested for peak power using IS95
Large signal models available