RF Power transistors, MRF6V12250HR3 and MRF6V12250HSR3, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications. View Product Image
Features
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Typical Pulsed Performance: VDD = 50 Volts, IDQ = 100 mA, Pout = 275 Watts Peak (27.5 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
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Power Gain: 20.3 dB
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Drain Efficiency: 65.5%
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Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak Power
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Typical Broadband Performance: VDD = 50 Volts, IDQ = 100 mA, Pout = 250 Watts Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
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Power Gain: 19.8 dB
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Drain Efficiency: 58%
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Characterized with Series Equivalent Large–Signal Impedance Parameters
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Internally Matched for Ease of Use
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Qualified Up to a Maximum of 50 VDD Operation
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Integrated ESD Protection
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Greater Negative Gate-Source Voltage Range for Improved Class C Operation
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
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These products are included in Freescale's with assured supply for a minimum of 10 years after launch.