特点
Fully Enhances N-Channel Power MOSFETs
12μA Standby Current
Operates at Supply Voltages from 9V to 24V
Short Circuit Protection
Easily Protected Against Supply Transients
Controlled Switching ON and OFF Times
No External Charge Pump Components
Compatible With Standard Logic Families
Available in 8-Pin SOIC
典型应用
典型应用
描述
描述 The LTC1255 dual high-side driver allows using low cost N-channel FETs for high-side industrial and automotive switching applications. An internal charge pump boosts the gate drive voltage above the positive rail, fully enhancing an N-channel MOS switch with no external components. Low power operation, with 12μA standby current, allows use in virtually all systems with maximum efficiency. Included on-chip is independent overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added to the current sense to prevent false triggering on high in-rush current loads. The LTC1255 operates from 9V to 24V supplies and is well suited for industrial and automotive applications. The LTC1255 is available in both an 8-pin DIP and an 8-pin SOIC.