详细描述
The RFG1M09180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak-to-average ratio applications, these high performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M09180 is an input-matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.
特点
Advanced GaN HEMT Technology
Typical Peak Modulated Power > 240W
Advanced Heat Sink Technology
Single Circuit for 865MHz To 960MHz
48V Operation Typical Performance: POUT = 47dBm Gain = 20dB Drain Efficiency = 39% ACP = -32.5dBc Linearizable to - 55dBc with DPD
POUT = 47dBm
Gain = 20dB
Drain Efficiency = 39%
ACP = -32.5dBc
Linearizable to - 55dBc with DPD
- 25°C To 85°C Operating Temperature
Optimized for Video Bandwidth and Minimized Memory Effects
RF Tested for 3GPP Performance
RF Tested for Peak Power Using IS95
Large Signal Models Available