The MHVIC915NR2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. View Product Image
Features
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Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to 960 MHz), IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
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Power Gain: 31 dB
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Power Added Efficiency: 21%
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ACPR @ 750 kHz Offset: –50 dBc in 30 kHz Bandwidth
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Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869–894 MHz), IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF
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Power Gain: 31 dB
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Power Added Efficiency: 21%
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ACPR @ 750 kHz Offset: –60 dBc in 30 kHz Bandwidth
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ACPR @ 1.98 MHz Offset: –66 dBc in 30 kHz Bandwidth
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Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full Frequency Band (921–960 MHz)
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Power Gain: 30 dB @ P1dB
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Power Added Efficiency = 56% @ P1dB
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Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power
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Characterized with Series Equivalent Large-Signal Impedance Parameters
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On-Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)
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Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
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On-Chip Current Mirror gm Reference FET for Self Biasing Application
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Integrated ESD Protection
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RoHS Compliant
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In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.