详细描述
RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
特点
Lower RTH for increased MTTF 108 Hours at TLead = 85°C
On-Chip Active Bias Control, Single 5V Supply
Excellent Linearity: +43dBm typical OIP3 at 1960MHz
High P1dB:?+25dBm typical
High Gain:+18.5dB at 850MHz
Efficient: Consumes Only 575mW