The MW4IC2020NB/GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. View Product Image
Features
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Typical Two–Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band
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Power Gain: 29 dB
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IMD: –32 dBc
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Drain Efficiency: 26% (at 1805 MHz) and 20% (at 1990 MHz)
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Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band
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Power Gain: 29 dB
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Spectral Regrowth @ 400 kHz Offset = –66 dBc
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Spectral Regrowth @ 600 kHz Offset = –77 dBc
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EVM: 1% rms
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Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
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Power Gain: 30 dB
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ACPR @ 885 kHz Offset = –61 dBc in 30 kHz Bandwidth
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ALT1 @ 1.25 MHz Offset = –69 dBc in 12.5 kHz Bandwidth
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ALT2 @ 2.25 MHz Offset = –59 dBc in 1 MHz Bandwidth
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Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power
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Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 8 W CW Pout.
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Characterized with Series Equivalent Large–Signal Impedance Parameters
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On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
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Integrated Temperature Compensation with Enable/Disable Function
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On-Chip Current Mirror gm Reference FET for Self Biasing Application
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Integrated ESD Protection
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200°C Capable Plastic Package
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N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
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In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.