The MRF8P29300HR6 and MRF8P29300HSR6 are RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. View Product Image
Features
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Typical Pulsed Performance: VDD = 30 Volts, IDQ = 100 mA
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Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)
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Characterized with Series Equivalent Large-Signal Impedance Parameters
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Internally Matched for Ease of Use
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Qualified Up to a Maximum of 32 VDD Operation
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Integrated ESD Protection
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Designed for Push-Pull Operation
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Greater Negative Gate-Source Voltage Range for Improved Class C Operation
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RoHS Compliant
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In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.