详细描述
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μm x 1500μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.
特点
27.5dBm Output Power (P1dB)
17dB Small Signal Gain (SSG)
0.9dB Noise Figure
42dBm OIP3
50% Power-Added Efficiency
FPD1500SOT89CE: RoHS Compliant