详细描述
The STA-6033 is a high performance, high efficiency 4.9-5.9 GHz Class AB Heterojunction Bipolar Transistor (HBT) power amplifier housed in a low cost surface mountable QFN 3x3 plastic package. This device is made with InGaP on GaAs device technology, and is fabricated with MOCVD for an ideal combination of low cost and high reliability. The STA-6033 is specifically designed as a final stage for 802.11a equipment in the 4.9-5.9 GHz band. It can operate from a 3.0 to 3.6V supply. Optimized on-chip impedance matching circuitry provides a 50 ohm nominal RF input impedance. A single external output matching circuit covers the entire 4.9-5.9 GHz band. The external output match allows for load line optimization for other applications, or optimized performance over narrower bands. The STA-6033 is designed as a drop-in replacement for similar parts in its class.
特点
802.11a Pout = 18 dBm @ 3 EVM, 200mA
P1dB = 25dBm
Simultaneous 4.9 - 5.9 GHz performance
Output return loss < -11 dB
On chip output power detector