详细描述
RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
特点
DC to 6GHz Operation
0.9dB NFMIN at 0.9GHz
24dB GMAX at 0.9GHz
|GOPT|=0.10 at 0.9GHz
OIP3=+28dBm P1dB=+9dBm
Low Cost High Performance Versatility