Description
This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits
Features
Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
Data width: x16
Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
Standard Self Refresh Mode
PASR、ATCSR、Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
CAS Latency: 2 and 3
Burst Length: 2、4 、8 and 16
Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver