ACQ08E SDSXD-128G-000000
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ACB2012H-060-T

厂商：
TDK
类别：
抗氧体磁珠和芯片
包装：
O4
封装：
2012
无铅情况/ROHS：
-
描述：
原装现货

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  • 参数
  • 描述
参数 数值

The MRFE6S9046NR1 and MRFE6S9046GNR1 are designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW, f = 960 MHz
    Power Gain = 19 dB
    Drain Efficiency = 57%
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point ≃ 45 Watts CW
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg., Full Frequency Band (920–960 MHz)
    Power Gain = 19 dB
    Drain Efficiency = 42.5%
    Spectral Regrowth @ 400 kHz Offset = –62.5 dBc
    Spectral Regrowth @ 600 kHz Offset = –72 dBc
    EVM = 2.1% rms
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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