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RFCM2680

厂商:
RFMD
类别:
RFMD射频IC
包装:
-
封装:
MCM
无铅情况/ROHS:
-
描述:
45MHz to 1003MHz GaAs/GaN Power D...

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  • 参数
  • 描述
  • 文档
参数 数值
Max Current (mA) 450
NF (dB) 3
Gain (dB) 23
Max NF (dB) 4
Package MCM
OIP3 (dBm) 49
Min Power Gain (dB) at FMAX 22.5
Frequency Range (Max) (MHz) 1003
ISUPPLY (mA) 430
Frequency Range (Min) (MHz) 45
VSUPPLY (V) 24
OP1dB (dBm) 32

详细描述

The RFCM2680 is a Power Doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

DC current of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level.


特点
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all Terminations
Extremely High Output Capability
22.5dB Min. Gain at 1003MHz
450mA Max. at 24VDC

请选择文档类型:
文档(Document)
文档名称 文档类型 软件 描述
RFCM2680PDF下载 点击下载 点击下载 RFCM2680 Data Sheet
RFCM2680PDF下载 点击下载 点击下载 Brochure: RFCM2680—The World’s First GaN-Based Surface Mount Power Doubler
RFCM2680PDF下载 点击下载 点击下载 Brochure: CATV GaN Amplifier Modules