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MHVIC2114NR2

厂商：
Freescale
类别：
RF放大器
包装：
Tape & Reel (TR)
封装：
PFP-16
无铅情况/ROHS：
无铅
描述：
2.2GHZ IPA PFP-16N

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  • 参数
  • 描述
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参数 数值
电源电压 27V
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) 5A991
Floor Life 168 HOURS
Frequency (Max) (MHz) 2170
Frequency Band (Min-Max) (MHz) 2110 to 2170
Gain (Typ) (dB) 32
Harmonized Tariff (US) Disclaimer 8542.31.0000
Last Order Date 01 Jul 2011
Last Ship Date 30 Jun 2012
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Material Composition Declaration (MCD) Download MCD Report
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
Micron Size (μm) .4
Minimum Package Quantity (MPQ) 1500
Moisture Sensitivity Level (MSL) 3
Mounting Style Surface Mount
MPQ Container REEL
Number of Reflow Cycles 3
Output Power (Typ) (W) (P1dB) 15
P1dB (Typ) (W) 14
Package Material Plastic
Pin/Lead/Ball Count 16
REACH SVHC Freescale REACH Statement
RoHS Certificate of Analysis (CoA) Contact Us
RoHS technical exemption(s) 7a
Sample Exception Availability N
Supply Voltage (Typ) (V) 27
Test Signal W-CDMA
频率 2.11GHz ~ 2.17GHz
增益 32dB
P1dB 15W
RF类型 Cellular, CDMA2000, W-CDMA, PCS
电源电流 95mA
Part Number MHVIC2114NR2
Device Sample Availability 02 Jul 2005
Device Sample Availability 15 Jun 2010
Application W-CDMA
Package Thickness (nominal) (mm) 2.300
Package Width (nominal) (mm) 7.000
Package Description and Mechanical Drawing PFP-16
Package Length (nominal) (mm) 7.000
Description 2.2GHZ IPA PFP-16N
Peak Package Body Temperature (PPT)(°C) 260
Power Gain (Typ) (dB) @ f (MHz) 32 @ 2170
Device Production Availability 15 Jun 2010
Device Production Availability 02 Jul 2005
Device Weight (g) .71455
Budgetary Price($US) -
Status No Longer Manufactured
Tape & Reel Yes
Thermal Resistance (Spec) (°CW) 5.52
Pb-Free No
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 15 @ PEP

The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale Semiconductor's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W–CDMA. The device is in a PFP-16 flat pack package that provides excellent thermal performance through a solderable backside contact. View Product Image

Features


  • Typical Two–Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band
    Power Gain:  32 dB
    IMD:  –30 dBc

  • Typical Single–Channel W–CDMA Performance: VDD = 27 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110–2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain:  32 dB
    ACPR:  –58 dBc
  • P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz
  • Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
  • On–Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
  • Integrated Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

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