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MHVIC910HNR2

厂商:
Freescale
类别:
RF放大器
包装:
Tape & Reel (TR)
封装:
PFP-16
无铅情况/ROHS:
无铅
描述:
IC 10W IPA PFP-16N

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  • 参数
  • 描述
  • 文档
参数 数值
电源电压 26V
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Floor Life 168 HOURS
Frequency (Max) (MHz) 960
Frequency Band (Min-Max) (MHz) 921 to 960
Gain (Typ) (dB) 39
Harmonized Tariff (US) Disclaimer 8542.31.0000
Last Order Date 01 Jul 2011
Last Ship Date 30 Jun 2012
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Material Composition Declaration (MCD) Download MCD Report
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
Micron Size (μm) .37
Minimum Package Quantity (MPQ) 1500
Moisture Sensitivity Level (MSL) 3
Mounting Style Surface Mount
MPQ Container REEL
Number of Reflow Cycles 3
Output Power (Typ) (W) (P1dB) 10
P1dB (Typ) (W) 10
Package Material Plastic
Pin/Lead/Ball Count 16
POQ Container REEL
REACH SVHC Freescale REACH Statement
RoHS Certificate of Analysis (CoA) Contact Us
RoHS technical exemption(s) 7a
Sample Exception Availability N
Supply Voltage (Typ) (V) 26
Test Signal CW
频率 921MHz ~ 960MHz
增益 39dB
P1dB 10W
RF类型 Cellular, GSM
电源电流 150mA
Part Number MHVIC910HNR2
Device Sample Availability 15 Jun 2010
Device Sample Availability 02 Jul 2005
Application GSM900
Package Thickness (nominal) (mm) 2.300
Package Width (nominal) (mm) 7.000
Package Description and Mechanical Drawing PFP-16
Package Length (nominal) (mm) 7.000
Description IC 10W IPA PFP-16N
Peak Package Body Temperature (PPT)(°C) 260
Power Gain (Typ) (dB) @ f (MHz) 39 @ 960
Device Production Availability 15 Jun 2010
Device Production Availability 02 Jul 2005
Device Weight (g) .71455
Budgetary Price($US) -
Preferred Order Quantity (POQ) 1500
Status No Longer Manufactured
Tape & Reel Yes
Thermal Resistance (Spec) (°CW) 2.9
Efficiency (Typ) (%) 48
Pb-Free No
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 10 @ CW

The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale's newest High Voltage (26 Volts) LDMOS IC technology, and contains a three–stage amplifier. Target applications include macrocell (driver function) and microcell base stations (final stage). The device is in a PFP–16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. View Product Image

Features

  • Typical GSM Performance: VDD = 26 Volts, IDQ = 150 mA, Pout = 10 Watts, Full Frequency Band (921–960 MHz)
    Power Gain: 39 dB (Typ)
    Power Added Efficiency: 48% (Typ)
  • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW Output Power
  • Stable into a 10:1 VSWR. All Spurs Below –60 dBc @ 0 to 40 dBm CW Pout.
  • On–Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
  • Integrated ESD Protection
  • Usable Frequency Range — 921 to 960 MHz
  • RoHS Compliant
  • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

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