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MWE6IC9080NBR1

厂商:
Freescale
类别:
RF放大器
包装:
Tape & Reel (TR)
封装:
TO-272 WB-14 LEAD
无铅情况/ROHS:
无铅
描述:
HV6E 900MHZ TO272WB14

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  • 参数
  • 描述
  • 文档
参数 数值
P1dB 90W
增益 28.8dB
频率 865MHz ~ 960MHz
电源电压 28V
RF类型 GSM, EDGE
Class AB
Harmonized Tariff (US) Disclaimer 8542.33.0000
Package Description and Mechanical Drawing TO-272 WB-14 LEAD
Supply Voltage (Typ) (V) 28
Thermal Resistance (Spec) (°CW) 0.52
Part Number MWE6IC9080NBR1
2nd Level Interconnect e3
Frequency Band (Min-Max) (MHz) 865 to 960
Material Type Tested Packaged Device
POQ Container REEL
Floor Life 168 HOURS
MPQ Container REEL
Number of Reflow Cycles 3
Sample Exception Availability Y
Test Signal CW
Die Technology LDMOS
Gain (Typ) (dB) 28.5
Moisture Sensitivity Level (MSL) 3
Package Thickness (nominal) (mm) 2.590
Device Weight (g) 1.90920
Peak Package Body Temperature (PPT)(°C) 260
Pb-Free No
Export Control Classification Number (US) EAR99
RoHS technical exemption(s) 7a
UL94 (plastics flammability test) V0: burning stops within 10 seconds on a vertical specimen; no drips allowed
Frequency (Max) (MHz) 960
Leadtime (weeks) 8
Mounting Style Surface Mount
Description HV6E 900MHZ TO272WB14
Efficiency (Typ) (%) 52.3
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 80 @ CW
Package Length (nominal) (mm) 23.620
RoHS Certificate of Analysis (CoA) Contact Us
Tape & Reel Yes
Application GSM / GSM EDGE
Minimum Package Quantity (MPQ) 500
Pin/Lead/Ball Count 15
Budgetary Price($US) -
Package Width (nominal) (mm) 9.020
Preferred Order Quantity (POQ) 500
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Micron Size (μm) .37
Output Power (Typ) (W) (P1dB) 90
P1dB (Typ) (W) 90
Status Active
Matching I/O
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Maximum Time at Peak Temperature (s) 40
Power Gain (Typ) (dB) @ f (MHz) 28.5 @ 960
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
REACH SVHC Freescale REACH Statement
Package Material Plastic

The MWE6IC9080NR1, MWE6IC9080GNR1 and MWE6IC9080NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 80 Watts CW Pout
  • Typical Pout @ 1 dB Compression Point 90 Watts CW
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 35 Watts Avg.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Data Sheets
文档名称 文档类型 软件 描述
MWE6IC9080NBR1PDF下载 点击下载 点击下载 MWE6IC9080N
Packaging Information
文档名称 文档类型 软件 描述
MWE6IC9080NBR1PDF下载 点击下载 点击下载 98ASA10653D
MWE6IC9080NBR1PDF下载 点击下载 点击下载 98ASA10649D
MWE6IC9080NBR1PDF下载 点击下载 点击下载 98ASA10650D
Engineering Bulletins
文档名称 文档类型 软件 描述
MWE6IC9080NBR1PDF下载 点击下载 点击下载 EB212
Application Notes
文档名称 文档类型 软件 描述
MWE6IC9080NBR1PDF下载 点击下载 点击下载 AN1987
MWE6IC9080NBR1PDF下载 点击下载 点击下载 AN1907
MWE6IC9080NBR1PDF下载 点击下载 点击下载 AN3789
MWE6IC9080NBR1PDF下载 点击下载 点击下载 AN1977
MWE6IC9080NBR1PDF下载 点击下载 点击下载 AN3263
Selector Guides
文档名称 文档类型 软件 描述
MWE6IC9080NBR1PDF下载 点击下载 点击下载 SG46