详细描述
The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3930D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3930D is an unmatched 0.5um gate, GaN transistor die suitable for many applications with >42dBm saturated power, >70% saturated drain efficiency, and >19dB small signal gain at 2GHz.
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特点
Broadband Operation DC to 4 GHz
Advanced GaN HEMT Technology
Packaged Small Signal Gain = 19 dB at 2 GHz
48V Typical Performance:
Output Power: 16 W at P3dB
Drain Efficiency: 70% at P3dB
Large Signal Models Available
Chip Dimensions: 0.96 mm x 1.19 mm x 0.10 mm
Active Area Periphery: 2.2 mm