详细描述
The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3933D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3933D is an unmatched 0.5um gate, GaN transistor die suitable for many applications with >49.5 dBm saturated power, >65% saturated drain efficiency, and >14dB small signal gain at 2GHz.
特点
Broadband Operation DC to 4?GHz
Advanced GaN HEMT Technology
Packaged Small Signal Gain?=?14?dB at 2?GHz
48?V Typical Packaged Performance Output Power 90?W at P3dB Drain Efficiency 65% at P3dB
Output Power 90?W at P3dB
Drain Efficiency 65% at P3dB
Large Signal Models Available
Chip Dimensions: 0.96?mm?x2.52?mm?x?0.10?mm
Active Area Periphery: 15.54?mm