详细描述
The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3934D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3934D is an unmatched 0.5mm gate, GaN transistor die suitable for many applications with > 51dBm saturated power, > 60% saturated drain efficiency, and > 13dB small signal gain at 2GHz.
特点
Broadband Operation DC-4GHz
Advanced GaN HEMT Technology
Packaged Small Signal Gain = 13dB at 2GHz
48V Typical Packaged Performance
Output Power 140W at P3dB
Drain Efficiency 60% at P3dB
Large Signal Models Available
Chip Dimensions: 0.96mm x 4.57mm x 0.10mm
Active Area Periphery:? 22.2mm