详细描述
The RF5612 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced BiFET Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in LTE Up Link (UL) mobile and Data Cards and 802.11e mobile applications. The device is provided in a 4mm?x?4mm?x?0.975mm, 10-Pin, leadless chip carrier with a backside ground. The RF5612 is designed to maintain linearity over a wide range of supply voltages and power outputs.
特点
Single Supply Voltage 3.3V
32dB Typical Gain Across Frequency Band
POUT?= 27dBm, LTE UL
POUT?= 25dBm < 2.5% EVM
2.5GHz to 2.7GHz Frequency Range
Output Power Detector
Optimized for a 50W System