详细描述
The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.
特点
Wideband Operation: 1.2GHz to 1.4GHz
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100μs to 1ms Pulse Width
10% to 20% Duty Cycle
100μs to 1ms Pulse Width
Integrated Matching Components for High Terminal Impedances
50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100μs, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature
Output Pulsed Power: 280W
Pulse Width: 100μs, Duty Cycle 10%
Small Signal Gain: 15dB
High Efficiency (55%)
- 40°C to 85°C Operating Temperature