详细描述
The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1023 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.
特点
Wideband Operation: 1.2GHz to 1.4GHz
Advanced GaN HEMT Technology
Advanced Heat SinkTechnology
Optimized Evaluation Board Layout for 50? Operation
Integrated Matching Components for High Terminal Impedances
36V Operation Typical Performance: Output Power: 225W Pulse Width: 1ms, Duty Cycle 10% Small Signal Gain: 15dBm High Efficiency (55%) -40°C to 85°C Operating Temperature
Output Power: 225W
Pulse Width: 1ms, Duty Cycle 10%
Small Signal Gain: 15dBm
High Efficiency (55%)
-40°C to 85°C Operating Temperature