详细描述
RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
特点
IP3: 41dBm at 240MHz
Stable Gain Over Temperature
Robust 1000V ESD, Class 1C
Operates From Single Supply
Low Thermal Resistance