详细描述
RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO > 7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM, and narrowband PCS bands.
特点
DC to 4000MHz Operation
Single Voltage Supply
Excellent Isolation: >50dB at 900MHz
50Ω In/Out, Broadband Match for Operation from DC?to 4GHz
Unconditionally Stable