详细描述
RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHzto3.5GHz. The SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements.The matte tin finish on the lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
特点
.05GHzto3.5GHz Operation
Lead Free, RoHS Compliant, andGreen Package
1.5dB NFMN at 2.44GHz
15.6dB GMAX at 2.44GHz
P1dB =+20.6dBm at 2.44GHz
OIP3 =+34.6dBm at 2.44GHz
Low Cost, High Performance,Versatility