详细描述
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications.
特点
High Linearity Performance
+21dBm IS-95 Channel Power at -55dBc ACP
+48dBm OIP3 Typical
On-Chip Active Bias Control
Patented High Reliability GaAs HBT Technology??
Surface-Mountable Plastic Package