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SPA-1118Z

厂商：
RFMD
类别：
RF放大器
包装：
Tape & Reel (TR)
封装：
SOIC-8
无铅情况/ROHS：
无铅
描述：
850MHz, 1W Power Amplifier with A...

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  • 参数
  • 描述
  • 文档
参数 数值
测试频率 810 ~ 960MHz
VSUPPLY (V) 5
NF (dB) 7.5
Package SOIC-8
OIP3 (dBm) 48
类别 RF/IF and RFID
噪声因数 7.5dB
系列 -
工作电流 275mA ~ 330mA
频率 810MHz ~ 960MHz
增益 16.2dB ~ 18.2dB
P1dB 29.5dBm (891.3mW)
RF类型 General Purpose
工作电压 4.75 V ~ 5.25 V
Gain (dB) 17.2
ISUPPLY (mA) 310
Frequency Range (Max) (MHz) 960
Frequency Range (Min) (MHz) 810
OP1dB (dBm) 29.5

详细描述

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications.


特点
High Linearity Performance
+21dBm IS-95 Channel Power at -55dBc ACP
+48dBm OIP3 Typical
On-Chip Active Bias Control
Patented High Reliability GaAs HBT Technology??
Surface-Mountable Plastic Package

请选择文档类型：
文档(Document)
文档名称 文档类型 软件 描述
SPA-1118ZPDF下载 点击下载 点击下载 Application Note: AN-037 ESD Handling Precautions - Class 0 Devices
SPA-1118ZPDF下载 点击下载 点击下载 S-Parameters
SPA-1118ZPDF下载 点击下载 点击下载 SPA1118Z Data Sheet
SPA-1118ZPDF下载 点击下载 点击下载 Qualification Report
SPA-1118ZPDF下载 点击下载 点击下载 Outline Drawing
SPA-1118ZPDF下载 点击下载 点击下载 Application Note: Solder Reflow Recommendations Sn/Pb and Pb Free for Plastic RFICs AN038
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