详细描述
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
特点
High Linearity Performance
+20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
+47dBm Typ. OIP3
High Gain: 33dB Typ.
On-Chip Active Bias Control
Patented high Reliability GaAs HBT Technology
Surface-Mountable Plastic Package