详细描述
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
特点
Now Available in Lead-Free, RoHS Compliant, and Green Packaging
High Linearity Performance:+21dBm IS-95 Channel Power at -55dBc ACP;+20.7dBm WCDMA Channel Power at -50dBc ACP;+47dBm Typ. OIP3
On-Chip Active Bias Control
High Gain: 24dB Typ. at 1960MHz
Patented High Reliability GaAs HBT Technology
Surface-Mountable Plastic Package