详细描述
RFMD’s portfolio of leading edge products for WLAN and WiMAX applications is enhanced with the introduction of the new SZM-2166Z high linearity 2.3-2.7 GHz 2W power amplifier. Produced in InGaP HBT technology the SZM-2166Z offers a cost effective solution to more expensive FET based solutions. With only 7.5 dB of backoff from P1dB the SZM-2166Z provides a full 1/2 watt of linear power at 2.5% EVM from a single positive bias. The SZM-2166Z is housed in a low cost 6x6 QFN package and boasts an ESD rating of class 1C.
特点
High gain accommodates all Tx/Rx chip sets
+27 dBm linear power for OFDM modulation
Active bias with adjustable Iq current
Flexible power up / down control for each gain stage
On chip power detector
Robust ESD Rating = Class 1C (1000V HBM