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MRF5S19100HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV5 LDMOS NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
Number of Reflow Cycles 3
Package Description and Mechanical Drawing NI-780S
RoHS Certificate of Analysis (CoA) Contact Us
Thermal Resistance (Spec) (°CW) 0.64
Device Sample Availability 04 May 2006
Intermodulation Distortion - IM3 (Typ) (dBc) -36.5
Part Number MRF5S19100HSR3
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 22 @ AVG
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Die Technology LDMOS
Test Signal N-CDMA
Class AB
Last Ship Date 14 May 2009
Power Gain (Typ) (dB) @ f (MHz) 13.9 @ 1990
Tape & Reel Yes
Device Production Availability 04 May 2006
Device Weight (g) 4.76300
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260
Halogen Free Yes
Pin/Lead/Ball Count 3
Sample Exception Availability N
Budgetary Price($US) -
Harmonized Tariff (US) Disclaimer 8542.31.0000
Matching I/O
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Maximum Time at Peak Temperature (s) 40
Supply Voltage (Typ) (V) 28
Description HV5 LDMOS NI780HS
Export Control Classification Number (US) 5A991
Device Production Availability 05 Feb 2004
Frequency (Max) (MHz) 1990
Frequency Band (Min-Max) (MHz) 1930 to 1990
Micron Size (μm) 6
Last Order Date 03 Oct 2008
Package Thickness (nominal) (mm) 3.760
Package Width (nominal) (mm) 9.780
REACH SVHC Freescale REACH Statement
Device Sample Availability 05 Feb 2004
P1dB (Typ) (W) 100
Status No Longer Manufactured
2nd Level Interconnect e4
Efficiency (Typ) (%) 25.5
Life Cycle Description (code) REMOVED FROM ACTIVE PORTFOLIO
Material Type Tested Packaged Device

MRF5S19100HR3, MRF5S19100HSR3 removed from active portfolio. View replacement parts via Orderable Part Number Search.

The MRF5S19100HR3 and MRF5S19100HSR3 are designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. View Product Image

Features

  • Typical 2–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band, IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 13.9 dB
    Efficiency: 25.5%
    IM3 @ 2.5 MHz Offset: –36.5 dBc in 1.2288 MHz Channel Bandwidth
    ACPR @ 885 kHz Offset: –50.7 dBc in 30 kHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Lower Thermal Resistance Package
  • Low Gold Plating Thickness on Leads, 40µ″ Nominal.
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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