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MRF5S9080NBR1

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
TO-272 WB-4
无铅情况/ROHS:
无铅
描述:
HV5 900MHZ 80W TO272WB4N

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  • 参数
  • 描述
  • 文档
参数 数值
Efficiency (Typ) (%) 59
Harmonized Tariff (US) Disclaimer 8541.29.0075
Minimum Package Quantity (MPQ) 500
REACH SVHC Freescale REACH Statement
Package Description and Mechanical Drawing TO-272 WB-4
Package Length (nominal) (mm) 23.620
RoHS technical exemption(s) 7a
UL94 (plastics flammability test) V0: burning stops within 10 seconds on a vertical specimen; no drips allowed
Device Sample Availability 01 Oct 2005
Leadtime (weeks) 8
Matching Input
Mounting Style Surface Mount
Package Width (nominal) (mm) 9.020
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Floor Life 168 HOURS
Micron Size (μm) .37
Number of Reflow Cycles 3
P1dB (Typ) (W) 80
Pin/Lead/Ball Count 5
POQ Container REEL
Preferred Order Quantity (POQ) 500
Frequency (Max) (MHz) 960
Life Cycle Description (code) PRODUCT MATURITY/SATURATION
Package Material Plastic
Supply Voltage (Typ) (V) 26
Status Active
Maximum Time at Peak Temperature (s) 40
Moisture Sensitivity Level (MSL) 3
Package Thickness (nominal) (mm) 2.590
Frequency Band (Min-Max) (MHz) 869 to 960
Material Type Tested Packaged Device
Die Technology LDMOS
Description HV5 900MHZ 80W TO272WB4N
Peak Package Body Temperature (PPT)(°C) 260
Sample Exception Availability N
Tape & Reel Yes
2nd Level Interconnect e3
Budgetary Price($US) -
MPQ Container REEL
Thermal Resistance (Spec) (°CW) 0.5
Part Number MRF5S9080NBR1
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Class AB
Device Production Availability 01 Oct 2005
Pb-Free No
Power Gain (Typ) (dB) @ f (MHz) 18 @ 960
Test Signal 1-Tone
Device Weight (g) 1.91110
Export Control Classification Number (US) EAR99
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 80 @ CW
RoHS Certificate of Analysis (CoA) Contact Us

The MRF5S9080NR1 and MRF5S9080NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications View Product Image

Features


  • Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869–894 MHz or 921–960 MHz).
    Power Gain: 18.5 dB
    Drain Efficiency: 60%

  • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869–894 MHz or 921–960 MHz).
    Power Gain: 19 dB
    Drain Efficiency: 42%
    Spectral Regrowth @ 400 kHz Offset = –63 dBc
    Spectral Regrowth @ 600 kHz Offset = –78 dBc
    EVM: 2.5% rms
  • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 200°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRF5S9080NBR1PDF下载 点击下载 点击下载 AN3263
MRF5S9080NBR1PDF下载 点击下载 点击下载 AN1955
MRF5S9080NBR1PDF下载 点击下载 点击下载 AN1907
MRF5S9080NBR1PDF下载 点击下载 点击下载 AN3789
Packaging Information
文档名称 文档类型 软件 描述
MRF5S9080NBR1PDF下载 点击下载 点击下载 98ASA10575D
MRF5S9080NBR1PDF下载 点击下载 点击下载 98ASA10577D
Selector Guides
文档名称 文档类型 软件 描述
MRF5S9080NBR1PDF下载 点击下载 点击下载 SG46
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF5S9080NBR1PDF下载 点击下载 点击下载 EB212
Data Sheets
文档名称 文档类型 软件 描述
MRF5S9080NBR1PDF下载 点击下载 点击下载 MRF5S9080N