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MRF6S21050LSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-400S
无铅情况/ROHS:
无铅
描述:
HV6 W-CDMA 11.5W NI400LS

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  • 参数
  • 描述
  • 文档
参数 数值
Device Production Availability 19 Oct 2005
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 11.5 @ AVG
Efficiency (Typ) (%) 27.7
Frequency Band (Min-Max) (MHz) 2110 to 2170
Harmonized Tariff (US) Disclaimer 8542.31.0000
Life Cycle Description (code) PRODUCT MATURITY/SATURATION
Power Gain (Typ) (dB) @ f (MHz) 16 @ 2170
RoHS Certificate of Analysis (CoA) Contact Us
Intermodulation Distortion - IM3 (Typ) (dBc) -37
Package Description and Mechanical Drawing NI-400S
Package Thickness (nominal) (mm) 3.660
Thermal Resistance (Spec) (°CW) 1.28
Class AB
Export Control Classification Number (US) EAR99
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Package Length (nominal) (mm) 10.160
Package Width (nominal) (mm) 10.160
Description HV6 W-CDMA 11.5W NI400LS
Budgetary Price($US) -
Device Sample Availability 19 Oct 2005
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
MPQ Container REEL
2nd Level Interconnect e4
Material Type Tested Packaged Device
Die Technology LDMOS
Micron Size (μm) 6
P1dB (Typ) (W) 50
POQ Container REEL
Device Weight (g) 2.52030
Frequency (Max) (MHz) 2170
Tape & Reel Yes
Minimum Package Quantity (MPQ) 250
REACH SVHC Freescale REACH Statement
Part Number MRF6S21050LSR3
Status Active
Matching I/O
Maximum Time at Peak Temperature (s) 40
Supply Voltage (Typ) (V) 28
Halogen Free Yes
Pin/Lead/Ball Count 3
Sample Exception Availability Y
Preferred Order Quantity (POQ) 250
Number of Reflow Cycles 3
Peak Package Body Temperature (PPT)(°C) 260
Test Signal W-CDMA

The MRF6S21050LR3 and MRF6S21050LSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 16 dB
    Drain Efficiency: 27.7%
    IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –40 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRF6S21050LSR3PDF下载 点击下载 点击下载 AN1908
MRF6S21050LSR3PDF下载 点击下载 点击下载 AN1923
MRF6S21050LSR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF6S21050LSR3PDF下载 点击下载 点击下载 EB212
Selector Guides
文档名称 文档类型 软件 描述
MRF6S21050LSR3PDF下载 点击下载 点击下载 SG46
Packaging Information
文档名称 文档类型 软件 描述
MRF6S21050LSR3PDF下载 点击下载 点击下载 98ARH98300A
MRF6S21050LSR3PDF下载 点击下载 点击下载 98ARH98301A
Data Sheets
文档名称 文档类型 软件 描述
MRF6S21050LSR3PDF下载 点击下载 点击下载 MRF6S21050L