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MRF7S18125AHR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV7 1.8GHZ CW 125W NI780

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  • 参数
  • 描述
  • 文档
参数 数值
Die Technology LDMOS
Efficiency (Typ) (%) 55
Description HV7 1.8GHZ CW 125W NI780
RoHS Certificate of Analysis (CoA) Contact Us
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Device Production Availability 13 Jun 2011
Material Type Tested Packaged Device
Number of Reflow Cycles 3
Harmonized Tariff (US) Disclaimer 8541.29.0075
Last Order Date 27 Jun 2012
Application GSM / GSM EDGE
Part Number MRF7S18125AHR3
Status No Longer Manufactured
Frequency Band (Min-Max) (MHz) 1805 to 1880
Budgetary Price($US) -
Minimum Package Quantity (MPQ) 250
MPQ Container REEL
Thermal Resistance (Spec) (°CW) 0.31
Device Weight (g) 6.42500
Halogen Free Yes
Package Description and Mechanical Drawing NI-780
Package Thickness (nominal) (mm) 3.760
Pin/Lead/Ball Count 3
POQ Container BOX
Sample Exception Availability N
Tape & Reel Yes
Device Sample Availability 13 Jun 2011
Power Gain (Typ) (dB) @ f (MHz) 17 @ 1880
2nd Level Interconnect e4
Micron Size (μm) 6
Preferred Order Quantity (POQ) 250
Matching I/O
Package Width (nominal) (mm) 9.780
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Maximum Time at Peak Temperature (s) 40
REACH SVHC Freescale REACH Statement
Class AB
Export Control Classification Number (US) EAR99
Last Ship Date 27 Jun 2013
P1dB (Typ) (W) 140
Supply Voltage (Typ) (V) 28
Test Signal 1-Tone
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 125 @ CW
Package Length (nominal) (mm) 34.040
Frequency (Max) (MHz) 1880
Peak Package Body Temperature (PPT)(°C) 260

The MRF7S18125AHR3 and MRF7S18125AHSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 125 Watts CW, f = 1880 MHz
    Power Gain = 17 dB
    Drain Efficiency = 55%
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1805–1880 MHz).
    Power Gain = 17 dB
    Drain Efficiency = 38%
    Spectral Regrowth @ 400 kHz Offset = –63 dBc
    Spectral Regrowth @ 600 kHz Offset = –75 dBc
    EVM = 1.75% rms
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW Output Power
  • Typical Pout @ 1 dB Compression Point 140 Watts CW
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Packaging Information
文档名称 文档类型 软件 描述
MRF7S18125AHR3PDF下载 点击下载 点击下载 98ASB15607C
MRF7S18125AHR3PDF下载 点击下载 点击下载 98ASB16718C
Application Notes
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MRF7S18125AHR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
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MRF7S18125AHR3PDF下载 点击下载 点击下载 EB212
Selector Guides
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MRF7S18125AHR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF7S18125AHR3PDF下载 点击下载 点击下载 MRF7S18125AH