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MRF7S18125BHSR5

厂商：
Freescale
类别：
RF功率晶体管
包装：
-
封装：
NI-780S
无铅情况/ROHS：
无铅
描述：
HV7 1.9GHZ CW 125W NI780

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 1990
Frequency Band (Min-Max) (MHz) 1930 to 1990
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) REMOVED FROM ACTIVE PORTFOLIO
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Matching I/O
P1dB (Typ) (W) 140
Test Signal 1-Tone
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV7 1.9GHZ CW 125W NI780
Package Width (nominal) (mm) 9.780
Application GSM / GSM EDGE
Thermal Resistance (Spec) (°CW) 0.31
Budgetary Price($US) -
Status No Longer Manufactured
Tape & Reel Yes
Part Number MRF7S18125BHSR5
Device Weight (g) 4.76300
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780S
Efficiency (Typ) (%) 55
Power Gain (Typ) (dB) @ f (MHz) 16.5 @ 1990
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 125 @ CW

The MRF7S18125BHR3 and MRF7S18125BHSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz
    Power Gain = 16.5 dB
    Drain Efficiency = 55%
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930–1990 MHz).
    Power Gain = 17 dB
    Drain Efficiency = 39%
    Spectral Regrowth @ 400 kHz Offset = –60 dBc
    Spectral Regrowth @ 600 kHz Offset = –74 dBc
    EVM = 2.6% rms
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW Output Power
  • Typical Pout @ 1 dB Compression Point ≃ 140 Watts CW
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

请选择文档类型：
Data Sheets
文档名称 文档类型 软件 描述
MRF7S18125BHSR5PDF下载 点击下载 点击下载 MRF7S18125BH
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S18125BHSR5PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF7S18125BHSR5PDF下载 点击下载 点击下载 98ASB15607C
MRF7S18125BHSR5PDF下载 点击下载 点击下载 98ASB16718C
Selector Guides
文档名称 文档类型 软件 描述
MRF7S18125BHSR5PDF下载 点击下载 点击下载 SG46
Application Notes
文档名称 文档类型 软件 描述
MRF7S18125BHSR5PDF下载 点击下载 点击下载 AN1955
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