可能感兴趣的商品

最近浏览过的商品

pic

MRF7S19210HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV7 1.9GHZ 28V63W NI780S

我要询价我要收藏

  • 参数
  • 描述
  • 文档
参数 数值
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Description HV7 1.9GHZ 28V63W NI780S
Matching I/O
Peak Package Body Temperature (PPT)(°C) Not Available
Package Width (nominal) (mm) 9.780
REACH SVHC Freescale REACH Statement
Micron Size (μm) 6
Test Signal W-CDMA
Class AB
Export Control Classification Number (US) EAR99
Power Gain (Typ) (dB) @ f (MHz) 20 @ 1990
Supply Voltage (Typ) (V) 28
Thermal Resistance (Spec) (°CW) 0.38
Status No Longer Manufactured
Frequency Band (Min-Max) (MHz) 1930 to 1990
Budgetary Price($US) -
Efficiency (Typ) (%) 29
Maximum Time at Peak Temperature (s) 40
Device Weight (g) 4.76300
Package Description and Mechanical Drawing NI-780S
Package Length (nominal) (mm) 20.570
Frequency (Max) (MHz) 1990
Tape & Reel Yes
Halogen Free Yes
P1dB (Typ) (W) 190
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Part Number MRF7S19210HSR3
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Die Technology LDMOS
Material Type Tested Packaged Device
Number of Reflow Cycles 3
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 63 @ AVG
Device Production Availability 15 Jun 2010
Harmonized Tariff (US) Disclaimer 8541.29.0075
Package Thickness (nominal) (mm) 3.760
2nd Level Interconnect e4
Device Sample Availability 15 Jun 2010
Life Cycle Description (code) REMOVED FROM ACTIVE PORTFOLIO

MRF7S19210HR3, MRF7S19210HSR3 removed from active portfolio. View replacement parts via Orderable Part Number Search.

The MRF7S19210HR3 and MRF7S19210HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 20 dB
    Drain Efficiency: 29%
    Device Output Signal PAR:  5.9 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –33 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 190 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 190 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

请选择文档类型:
Data Sheets
文档名称 文档类型 软件 描述
MRF7S19210HSR3PDF下载 点击下载 点击下载 MRF7S19210H