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MRF7S21080HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV7 2.1GHZ 22W NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
POQ Container BOX
Sample Exception Availability Y
P1dB (Typ) (W) 80
Leadtime (weeks) 8
Description HV7 2.1GHZ 22W NI780HS
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 22 @ AVG
Package Description and Mechanical Drawing NI-780S
Power Gain (Typ) (dB) @ f (MHz) 18 @ 2170
Device Production Availability 15 Jun 2010
Die Technology LDMOS
Efficiency (Typ) (%) 32
Material Type Tested Packaged Device
Micron Size (μm) 6
Status Active
Harmonized Tariff (US) Disclaimer 8541.29.0075
Maximum Time at Peak Temperature (s) 40
2nd Level Interconnect e4
Matching I/O
Package Width (nominal) (mm) 9.780
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Number of Reflow Cycles 3
Test Signal W-CDMA
Part Number MRF7S21080HSR3
Frequency (Max) (MHz) 2170
Tape & Reel Yes
Device Sample Availability 15 Jun 2010
Minimum Package Quantity (MPQ) 250
Package Thickness (nominal) (mm) 3.760
REACH SVHC Freescale REACH Statement
Budgetary Price($US) -
MPQ Container REEL
Frequency Band (Min-Max) (MHz) 2110 to 2170
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260
Preferred Order Quantity (POQ) 250
Export Control Classification Number (US) EAR99
Halogen Free Yes
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Class AB
Device Weight (g) 4.76300
Supply Voltage (Typ) (V) 28
Thermal Resistance (Spec) (°CW) 0.65

The MRF7S21080HR3 and MRF7S21080HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 22 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 18 dB
    Drain Efficiency: 32%
    Device Output Signal PAR:  6.5 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 80 Watts CW Peak Tuned Output Power
  • Pout @ 1 dB Compression Point ≥ 80 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Application Notes
文档名称 文档类型 软件 描述
MRF7S21080HSR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S21080HSR3PDF下载 点击下载 点击下载 EB212
Selector Guides
文档名称 文档类型 软件 描述
MRF7S21080HSR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF7S21080HSR3PDF下载 点击下载 点击下载 MRF7S21080H
Packaging Information
文档名称 文档类型 软件 描述
MRF7S21080HSR3PDF下载 点击下载 点击下载 98ASB16718C
MRF7S21080HSR3PDF下载 点击下载 点击下载 98ASB15607C