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MRF7S21170HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-880
无铅情况/ROHS:
无铅
描述:
HV7 2.1GHZ WCDMA NI880H

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  • 参数
  • 描述
  • 文档
参数 数值
Leadtime (weeks) 8
Package Thickness (nominal) (mm) .200
Floor Life TIME ON LABEL
REACH SVHC Freescale REACH Statement
RoHS Certificate of Analysis (CoA) Contact Us
Class AB
Export Control Classification Number (US) EAR99
POQ Container BOX
Package Length (nominal) (mm) 1.340
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 50 @ AVG
Power Gain (Typ) (dB) @ f (MHz) 16 @ 2170
Thermal Resistance (Spec) (°CW) 0.36
Part Number MRF7S21170HR3
Device Weight (g) 9.73370
Efficiency (Typ) (%) 31
P1dB (Typ) (W) 170
Description HV7 2.1GHZ WCDMA NI880H
Status Active
Maximum Time at Peak Temperature (s) 40
Number of Reflow Cycles 3
Package Width (nominal) (mm) .540
Test Signal W-CDMA
2nd Level Interconnect e4
Matching I/O
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Preferred Order Quantity (POQ) 250
Supply Voltage (Typ) (V) 28
Device Production Availability 15 Jun 2010
Die Technology LDMOS
Life Cycle Description (code) PRODUCT MATURITY/SATURATION
Micron Size (μm) 6
Moisture Sensitivity Level (MSL) 6
Frequency Band (Min-Max) (MHz) 2110 to 2170
Halogen Free Yes
Package Description and Mechanical Drawing NI-880
Peak Package Body Temperature (PPT)(°C) 260
Pin/Lead/Ball Count 3
MPQ Container REEL
Sample Exception Availability Y
Tape & Reel Yes
Device Sample Availability 15 Jun 2010
Minimum Package Quantity (MPQ) 250
Budgetary Price($US) -
Material Type Tested Packaged Device
Frequency (Max) (MHz) 2170
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Harmonized Tariff (US) Disclaimer 8541.29.0075

The MRF7S21170HR3 and MRF7S21170HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 16 dB
    Drain Efficiency: 31%
    Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output Power
  • Pout @ 1 dB Compression Point 170 W CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRF7S21170HR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S21170HR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF7S21170HR3PDF下载 点击下载 点击下载 98ARB18493C
MRF7S21170HR3PDF下载 点击下载 点击下载 98ARB18660C
Selector Guides
文档名称 文档类型 软件 描述
MRF7S21170HR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF7S21170HR3PDF下载 点击下载 点击下载 MRF7S21170H