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MRF7S21210HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV7 2.1GHZ 63W NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
Halogen Free Yes
MPQ Container REEL
Package Description and Mechanical Drawing NI-780
Package Length (nominal) (mm) 34.040
Peak Package Body Temperature (PPT)(°C) 260
Pin/Lead/Ball Count 3
Sample Exception Availability N
Description HV7 2.1GHZ 63W NI780H
Device Sample Availability 15 Jun 2010
Frequency (Max) (MHz) 2170
Package Thickness (nominal) (mm) 3.760
REACH SVHC Freescale REACH Statement
Thermal Resistance (Spec) (°CW) 0.37
Frequency Band (Min-Max) (MHz) 2110 to 2170
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Die Technology LDMOS
Last Ship Date 27 Jun 2013
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 63 @ AVG
Part Number MRF7S21210HR3
Matching I/O
Supply Voltage (Typ) (V) 28
Device Sample Availability 13 Jun 2011
Tape & Reel Yes
Device Production Availability 13 Jun 2011
Last Order Date 27 Jun 2012
Number of Reflow Cycles 3
Test Signal W-CDMA
Efficiency (Typ) (%) 29
Harmonized Tariff (US) Disclaimer 8541.29.0075
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Maximum Time at Peak Temperature (s) 40
Power Gain (Typ) (dB) @ f (MHz) 18.5 @ 2170
Device Production Availability 15 Jun 2010
Preferred Order Quantity (POQ) 250
Class AB
Export Control Classification Number (US) EAR99
P1dB (Typ) (W) 190
Device Weight (g) 6.42500
Micron Size (μm) 6
RoHS Certificate of Analysis (CoA) Contact Us
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Package Width (nominal) (mm) 9.780
Budgetary Price($US) -
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Status No Longer Manufactured
2nd Level Interconnect e4
Material Type Tested Packaged Device

The MRF7S21210HR3 and MRF7S21210HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA, PCN-PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 18.5 dB
    Drain Efficiency: 29%
    Device Output Signal PAR:  5.9 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –33 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW Output Power
  • Typical Pout @ 1 dB Compression Point 190 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S21210HR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF7S21210HR3PDF下载 点击下载 点击下载 98ASB15607C
MRF7S21210HR3PDF下载 点击下载 点击下载 98ASB16718C
Selector Guides
文档名称 文档类型 软件 描述
MRF7S21210HR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF7S21210HR3PDF下载 点击下载 点击下载 MRF7S21210H
Application Notes
文档名称 文档类型 软件 描述
MRF7S21210HR3PDF下载 点击下载 点击下载 AN1955