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MRF7S21210HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV7 2.1GHZ WCDMA NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Device Sample Availability 15 Jun 2010
Minimum Package Quantity (MPQ) 250
REACH SVHC Freescale REACH Statement
Frequency (Max) (MHz) 2170
Frequency Band (Min-Max) (MHz) 2110 to 2170
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260
Preferred Order Quantity (POQ) 250
Sample Exception Availability N
Budgetary Price($US) -
Efficiency (Typ) (%) 29
Matching I/O
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Maximum Time at Peak Temperature (s) 40
Supply Voltage (Typ) (V) 28
Micron Size (μm) 6
Test Signal W-CDMA
Class AB
MPQ Container REEL
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Device Sample Availability 13 Jun 2011
Last Ship Date 27 Jun 2013
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 63 @ AVG
Tape & Reel Yes
Status No Longer Manufactured
Package Thickness (nominal) (mm) 3.760
Package Width (nominal) (mm) 9.780
POQ Container BOX
Export Control Classification Number (US) EAR99
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Description HV7 2.1GHZ WCDMA NI780HS
Harmonized Tariff (US) Disclaimer 8541.29.0075
Power Gain (Typ) (dB) @ f (MHz) 18.5 @ 2170
Thermal Resistance (Spec) (°CW) 0.37
Die Technology LDMOS
Material Type Tested Packaged Device
Part Number MRF7S21210HSR3
Device Production Availability 13 Jun 2011
Device Production Availability 15 Jun 2010
Number of Reflow Cycles 3
Package Description and Mechanical Drawing NI-780S
Halogen Free Yes
P1dB (Typ) (W) 190
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Device Weight (g) 4.76300
Last Order Date 27 Jun 2012

The MRF7S21210HR3 and MRF7S21210HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA, PCN-PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 18.5 dB
    Drain Efficiency: 29%
    Device Output Signal PAR:  5.9 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –33 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW Output Power
  • Typical Pout @ 1 dB Compression Point 190 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Data Sheets
文档名称 文档类型 软件 描述
MRF7S21210HSR3PDF下载 点击下载 点击下载 MRF7S21210H
Selector Guides
文档名称 文档类型 软件 描述
MRF7S21210HSR3PDF下载 点击下载 点击下载 SG46
Application Notes
文档名称 文档类型 软件 描述
MRF7S21210HSR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S21210HSR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF7S21210HSR3PDF下载 点击下载 点击下载 98ASB16718C
MRF7S21210HSR3PDF下载 点击下载 点击下载 98ASB15607C