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MRF8P20100HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI 780H-4
无铅情况/ROHS:
无铅
描述:
HV8 2GHZ 100W NI780H-4

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  • 参数
  • 描述
  • 文档
参数 数值
Efficiency (Typ) (%) 44.3
Description HV8 2GHZ 100W NI780H-4
Die Technology LDMOS
Frequency (Max) (MHz) 2025
Micron Size (μm) 6
Power Gain (Typ) (dB) @ f (MHz) 16 @ 2025
Halogen Free Yes
Sample Exception Availability Y
MPQ Container REEL
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Tape & Reel Yes
Status Active
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Maximum Time at Peak Temperature (s) 40
Package Thickness (nominal) (mm) 3.730
Supply Voltage (Typ) (V) 28
P1dB (Typ) (W) 78
Budgetary Price($US) -
Minimum Package Quantity (MPQ) 250
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 20 @ AVG
POQ Container REEL
Harmonized Tariff (US) Disclaimer 8541.29.0075
Matching I/O
2nd Level Interconnect e4
Device Weight (g) 6.42500
Material Type Tested Packaged Device
REACH SVHC Freescale REACH Statement
Class AB
Export Control Classification Number (US) EAR99
Frequency Band (Min-Max) (MHz) 1805 to 2025
Package Width (nominal) (mm) 9.780
Leadtime (weeks) 8
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
RoHS Certificate of Analysis (CoA) Contact Us
Number of Reflow Cycles 3
Peak Package Body Temperature (PPT)(°C) 260
Pin/Lead/Ball Count 5
Test Signal W-CDMA
Part Number MRF8P20100HR3
Package Description and Mechanical Drawing NI 780H-4
Package Length (nominal) (mm) 34.040
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.88

The MRF8P20100HR3 and MRF8P20100HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg.
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8P20100HR3PDF下载 点击下载 点击下载 EB212
Selector Guides
文档名称 文档类型 软件 描述
MRF8P20100HR3PDF下载 点击下载 点击下载 SG46
Packaging Information
文档名称 文档类型 软件 描述
MRF8P20100HR3PDF下载 点击下载 点击下载 98ASA10718D
MRF8P20100HR3PDF下载 点击下载 点击下载 98ASA10793D
Application Notes
文档名称 文档类型 软件 描述
MRF8P20100HR3PDF下载 点击下载 点击下载 AN1955
Data Sheets
文档名称 文档类型 软件 描述
MRF8P20100HR3PDF下载 点击下载 点击下载 MRF8P20100H