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MRF8P20100HR5

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI 780H-4
无铅情况/ROHS:
无铅
描述:
HV8 2GHZ 100W NI780H-4

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  • 参数
  • 描述
  • 文档
参数 数值
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Description HV8 2GHZ 100W NI780H-4
Minimum Package Quantity (MPQ) 50
POQ Container REEL
Tape & Reel Yes
Package Width (nominal) (mm) 9.780
REACH SVHC Freescale REACH Statement
Status Active
Budgetary Price($US) -
Matching I/O
Maximum Time at Peak Temperature (s) 40
Supply Voltage (Typ) (V) 28
Efficiency (Typ) (%) 44.3
Frequency (Max) (MHz) 2025
Micron Size (μm) 6
Power Gain (Typ) (dB) @ f (MHz) 16 @ 2025
Test Signal W-CDMA
Part Number MRF8P20100HR5
Export Control Classification Number (US) EAR99
Frequency Band (Min-Max) (MHz) 1805 to 2025
MPQ Container REEL
Preferred Order Quantity (POQ) 50
Leadtime (weeks) 8
Material Type Tested Packaged Device
Halogen Free Yes
Package Description and Mechanical Drawing NI 780H-4
Package Length (nominal) (mm) 34.040
Sample Exception Availability N
Thermal Resistance (Spec) (°CW) 0.88
Class AB
Peak Package Body Temperature (PPT)(°C) 260
Harmonized Tariff (US) Disclaimer 8541.29.0075
Number of Reflow Cycles 3
Pin/Lead/Ball Count 5
RoHS Certificate of Analysis (CoA) Contact Us
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Die Technology LDMOS
P1dB (Typ) (W) 78
Device Weight (g) 6.42500
2nd Level Interconnect e4
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 20 @ AVG
Package Thickness (nominal) (mm) 3.730

The MRF8P20100HR3 and MRF8P20100HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg.
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Data Sheets
文档名称 文档类型 软件 描述
MRF8P20100HR5PDF下载 点击下载 点击下载 MRF8P20100H
Selector Guides
文档名称 文档类型 软件 描述
MRF8P20100HR5PDF下载 点击下载 点击下载 SG46
Packaging Information
文档名称 文档类型 软件 描述
MRF8P20100HR5PDF下载 点击下载 点击下载 98ASA10718D
MRF8P20100HR5PDF下载 点击下载 点击下载 98ASA10793D
Application Notes
文档名称 文档类型 软件 描述
MRF8P20100HR5PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8P20100HR5PDF下载 点击下载 点击下载 EB212