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MRF8P20160HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI 780H-4
无铅情况/ROHS:
无铅
描述:
HV8 2GHZ 160W NI780H-4

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  • 参数
  • 描述
  • 文档
参数 数值
Die Technology LDMOS
2nd Level Interconnect e4
Material Type Tested Packaged Device
Number of Reflow Cycles 3
Peak Package Body Temperature (PPT)(°C) 260
Pin/Lead/Ball Count 5
Test Signal W-CDMA
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Harmonized Tariff (US) Disclaimer 8541.29.0075
MPQ Container REEL
Package Description and Mechanical Drawing NI 780H-4
Sample Exception Availability Y
Device Production Availability 21 Jun 2011
Halogen Free Yes
Device Weight (g) 6.42500
REACH SVHC Freescale REACH Statement
Part Number MRF8P20160HR3
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 37 @ AVG
Package Length (nominal) (mm) 34.040
POQ Container REEL
Preferred Order Quantity (POQ) 250
Matching I/O
Description HV8 2GHZ 160W NI780H-4
Budgetary Price($US) -
Minimum Package Quantity (MPQ) 250
P1dB (Typ) (W) 107
Status Active
Maximum Time at Peak Temperature (s) 40
Package Thickness (nominal) (mm) 3.730
Tape & Reel Yes
Efficiency (Typ) (%) 45.8
Frequency Band (Min-Max) (MHz) 1880 to 2025
Package Width (nominal) (mm) 9.780
Frequency (Max) (MHz) 2025
Micron Size (μm) 6
Power Gain (Typ) (dB) @ f (MHz) 16.5 @ 1920
Leadtime (weeks) 8
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Class AB
Export Control Classification Number (US) EAR99
RoHS Certificate of Analysis (CoA) Contact Us
Supply Voltage (Typ) (V) 28
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Device Sample Availability 21 Jun 2011
Thermal Resistance (Spec) (°CW) 0.75

The MRF8P20160HR3 and MRF8P20160HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 160 Watts CW
  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
    NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Packaging Information
文档名称 文档类型 软件 描述
MRF8P20160HR3PDF下载 点击下载 点击下载 98ASA10718D
MRF8P20160HR3PDF下载 点击下载 点击下载 98ASA10793D
Selector Guides
文档名称 文档类型 软件 描述
MRF8P20160HR3PDF下载 点击下载 点击下载 SG46
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8P20160HR3PDF下载 点击下载 点击下载 EB212
Application Notes
文档名称 文档类型 软件 描述
MRF8P20160HR3PDF下载 点击下载 点击下载 AN1955
Data Sheets
文档名称 文档类型 软件 描述
MRF8P20160HR3PDF下载 点击下载 点击下载 MRF8P20160H