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MRF8S18120HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV8 1.8GHZ 120W NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
Status Active
Efficiency (Typ) (%) 49.8
Micron Size (μm) 6
Power Gain (Typ) (dB) @ f (MHz) 18.2 @ 1805
REACH SVHC Freescale REACH Statement
RoHS Certificate of Analysis (CoA) Contact Us
Budgetary Price($US) -
Device Sample Availability 17 Jun 2010
Thermal Resistance (Spec) (°CW) 0.47
2nd Level Interconnect e4
Export Control Classification Number (US) 5A991
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Matching I/O
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Preferred Order Quantity (POQ) 250
Supply Voltage (Typ) (V) 28
Frequency (Max) (MHz) 1880
Minimum Package Quantity (MPQ) 250
Device Production Availability 17 Jun 2010
Halogen Free Yes
Package Length (nominal) (mm) 20.570
Pin/Lead/Ball Count 3
Part Number MRF8S18120HSR3
Package Width (nominal) (mm) 9.780
Test Signal 1-Tone
Tape & Reel Yes
Description HV8 1.8GHZ 120W NI780HS
Class AB
Device Weight (g) 4.76300
Package Thickness (nominal) (mm) 3.760
Leadtime (weeks) 8
MPQ Container REEL
Sample Exception Availability Y
Die Technology LDMOS
Package Description and Mechanical Drawing NI-780S
Frequency Band (Min-Max) (MHz) 1805 to 1880
Material Type Tested Packaged Device
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 72 @ CW
P1dB (Typ) (W) 120
POQ Container REEL
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Harmonized Tariff (US) Disclaimer 8541.29.0075

The MRF8S18120HR3 and MRF8S18120HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW
  • Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 120 Watts CW
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Data Sheets
文档名称 文档类型 软件 描述
MRF8S18120HSR3PDF下载 点击下载 点击下载 MRF8S18120H
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S18120HSR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF8S18120HSR3PDF下载 点击下载 点击下载 98ASB16718C
MRF8S18120HSR3PDF下载 点击下载 点击下载 98ASB15607C
Application Notes
文档名称 文档类型 软件 描述
MRF8S18120HSR3PDF下载 点击下载 点击下载 AN1955
Selector Guides
文档名称 文档类型 软件 描述
MRF8S18120HSR3PDF下载 点击下载 点击下载 SG46