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MRF8S21100HR3

厂商：
Freescale
类别：
RF功率晶体管
包装：
-
封装：
NI-780
无铅情况/ROHS：
无铅
描述：
HV8 2.1GHZ 100W NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
Device Weight (g) 6.42500
Harmonized Tariff (US) Disclaimer 8541.29.0075
REACH SVHC Freescale REACH Statement
Application LTE / W-CDMA
Leadtime (weeks) 8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 24 @ AVG
P1dB (Typ) (W) 100
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Export Control Classification Number (US) 5A991
Number of Reflow Cycles 3
POQ Container REEL
Test Signal W-CDMA
Description HV8 2.1GHZ 100W NI780H
Part Number MRF8S21100HR3
Package Width (nominal) (mm) 9.780
Sample Exception Availability Y
Thermal Resistance (Spec) (°CW) 0.48
Status Active
Maximum Time at Peak Temperature (s) 40
2nd Level Interconnect e4
Material Type Tested Packaged Device
Micron Size (μm) 6
Preferred Order Quantity (POQ) 250
Die Technology LDMOS
Matching I/O
Frequency (Max) (MHz) 2170
Halogen Free Yes
Package Description and Mechanical Drawing NI-780
Package Length (nominal) (mm) 34.040
Package Thickness (nominal) (mm) 3.760
Pin/Lead/Ball Count 3
Efficiency (Typ) (%) 33.4
Power Gain (Typ) (dB) @ f (MHz) 18.3 @ 2170
Tape & Reel Yes
Budgetary Price($US) -
Minimum Package Quantity (MPQ) 250
MPQ Container REEL
Frequency Band (Min-Max) (MHz) 2110 to 2170
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Peak Package Body Temperature (PPT)(°C) 260
Class AB
Supply Voltage (Typ) (V) 28
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
RoHS Certificate of Analysis (CoA) Contact Us

The MRF8S21100HR3 and MRF8S21100HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

请选择文档类型：
Application Notes
文档名称 文档类型 软件 描述
MRF8S21100HR3PDF下载 点击下载 点击下载 AN1955
Selector Guides
文档名称 文档类型 软件 描述
MRF8S21100HR3PDF下载 点击下载 点击下载 SG46
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S21100HR3PDF下载 点击下载 点击下载 EB212
Data Sheets
文档名称 文档类型 软件 描述
MRF8S21100HR3PDF下载 点击下载 点击下载 MRF8S21100H
Packaging Information
文档名称 文档类型 软件 描述
MRF8S21100HR3PDF下载 点击下载 点击下载 98ASB16718C
MRF8S21100HR3PDF下载 点击下载 点击下载 98ASB15607C
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