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MRF8S21120HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV8 2.1GHZ 120W NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
Application LTE / W-CDMA
Leadtime (weeks) 8
Description HV8 2.1GHZ 120W NI780H
Die Technology LDMOS
2nd Level Interconnect e4
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 28 @ AVG
Class AB
Life Cycle Description (code) PRODUCT RAPID GROWTH
Matching I/O
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Power Gain (Typ) (dB) @ f (MHz) 17.6 @ 2170
Supply Voltage (Typ) (V) 28
Device Weight (g) 6.42500
RoHS Certificate of Analysis (CoA) Contact Us
Device Production Availability 15 Jun 2010
Micron Size (μm) 6
Preferred Order Quantity (POQ) 250
Status Active
Efficiency (Typ) (%) 34
Maximum Time at Peak Temperature (s) 40
Thermal Resistance (Spec) (°CW) 0.53
Export Control Classification Number (US) 5A991
Number of Reflow Cycles 3
Test Signal W-CDMA
Frequency Band (Min-Max) (MHz) 2110 to 2170
Peak Package Body Temperature (PPT)(°C) 260
Part Number MRF8S21120HR3
Halogen Free Yes
MPQ Container REEL
Package Description and Mechanical Drawing NI-780
Package Length (nominal) (mm) 34.040
Pin/Lead/Ball Count 3
Sample Exception Availability Y
Device Sample Availability 15 Jun 2010
Tape & Reel Yes
Budgetary Price($US) -
Material Type Tested Packaged Device
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Harmonized Tariff (US) Disclaimer 8541.29.0075
REACH SVHC Freescale REACH Statement
Frequency (Max) (MHz) 2170
P1dB (Typ) (W) 107
Package Thickness (nominal) (mm) 3.760
Package Width (nominal) (mm) 9.780

The MRF8S21120HR3 and MRF8S21120HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 107 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRF8S21120HR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S21120HR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF8S21120HR3PDF下载 点击下载 点击下载 98ASB15607C
MRF8S21120HR3PDF下载 点击下载 点击下载 98ASB16718C
Data Sheets
文档名称 文档类型 软件 描述
MRF8S21120HR3PDF下载 点击下载 点击下载 MRF8S21120H
Selector Guides
文档名称 文档类型 软件 描述
MRF8S21120HR3PDF下载 点击下载 点击下载 SG46